B. H. Hong, S. I. Rybchenko, I. E. Itskevich, S. K. Haywood, R. Intartaglia, V. Tasco, G. Rainò, and M. De Giorgi, Applicability of the k·p Method to Modeling of InAs/GaSb Short-period Superlattices, Physical Review B 79, 165323 (2009)

G. H. Yeap, S. I. Rybchenko, I. E. Itskevich, and S. K. Haywood, Type-II InAs_xSb_1-x/InAs quantum dots for midinfrared applications: Effect of morphology and composition on electronic and optical properties, Physical Review B 79, 075305 (2009)

S. I. Rybchenko, R. Gupta, K. T. Lai, I. E. Itskevich, S. K. Haywood, V. Tasco, N. Deguffroy, A. N. Baranov, E. Tournié, Conduction-band crossover induced by misfit strain in InSb/GaSb self-assembled quantum dots, Physical Review B 76, 193309 (2007)

A. Krier, V. M. Smirnov, P. J. Batty, M. Yin, K. T. Lai, S. I. Rybchenko, S. K. Haywood, V. I. Vasil`ev, G. S. Gagis, and V. I. Kuchinskii, Midinfrared Photoluminescence and Phase Separation in Pentenary GaInAsPSb Alloys Grown by Liquid Phase Epitaxy, Applied Physics Letters 91, 082102 (2007)

S. I. Rybchenko, G. H. Yeap, R. Gupta, I. E. Itskevich, and S. K. Haywood, Importance of aspect ratio over shape in determining the quantization potential of self-assembled zinc-blende III-V quantum dots, Journal of Applied Physics 102, 013706 (2007)

A. C. H. Lim, R. Gupta, S. K. Haywood, M. J. Steer, M. Hopkinson, and G. Hill, Electric field induced blueshift of the e1-hh1 exciton transition in a GaAs_1-xN_x/GaAs (x<1%) stepped quantum well, Applied Physics Letter 89, 261110 (2006)

A. H. Mohamed, M. Missous, K. T. Lai and S. K. Haywood, Near Room Temperature Operation of a Highly Strained Short Wavelength (2.1mm) AlAs/In_0.84Ga_0.16As/AlAs/InAlAs QWIPs,  Semiconductor Science Technology 21, 813 (2006)

S. I. Rybchenko, I. E. Itskevich, M. S. Skolnick, J. Cahill, A. I. Tartakovskii, G. Hill and M. Hopkinson, Tuning of Electronic Coupling Between Self-assembled Quantum Dots, Applied Physics Letters 87, 033104 (2005)

K. T. Lai, A. H. Mohamed, M. Missous, R. Gupta and S. K. Haywood, Photovoltaic Operation up to 270K of a Strain-compesated AlAs/In0.84Ga0.16As/AlAs/InAlAs Quantum Well Infrared Photodetector, Applied Physics Letters 87, 192113  (2005)

K. T. Lai, R. Gupta, M. Missous, and S. K. Haywood, Intersubband Absorption from 2-7mm using Strain-compensated Double-barrier InGaAs Multiquantum Wells, Proceedings of the 27th International Conference on the Physics of Semiconductors Part B, Flagstaff, Arizona, 2005, Vol. 772, p.1135, edited by José Menéndez and Chris G. Van de Walle.

K. T. Lai, R. Gupta, M. Missous, and S. K. Haywood, Intersubband Absorption from 2-7mm in Strain-compensated Double-barrier In(x)Ga(1-x)As Multiquantum Wells, Semiconductor Science Technology 19, 1263 (2004)

M. Missous, C. J. Mitchell, S. L. Sly, K. T. Lai, R. Gupta and S. K. Haywood, Highly Strain In(x)Ga(1-x)As-In(y)Al(1-y)As (x>0.8, y<0.3) Layers for Short Wavelength QWIP and QCL Structures Grown by MBE, Physica E 20, 496 (2004)

R. Gupta, K. T. Lai, M. Missous and S. K. Haywood, Subband Non-parabolicity Estimated from Multiple Intersubband Absorption in Highly Doped Multi-quantum Wells, Physical Review B 69, 033303 (2004)

S. K. Haywood, A. C. H. Lim, R. Gupta, S. Emery, J. H. C. Hogg, V. Hewer, P. N. Stavrinou, M. Hopkinson and G. Hill, Demonstration of A Blue-shift in Type II Asymmetric InP/InAsP/InGaAs Multiple Quantum Well Structures, Journal of Applied Physics 94, 3222 (2003)

K. T. Lai, M. Missous, R. Gupta and S. K. Haywood, Intersubband Absorption in Strain-compensated InAlAs/AlAs/In_xGa_1-xAs (x~0.8) Quantum Wells Grown on InP, Journal of Applied Physics 93, 6065 (2003)

K. T. Lai, S. K. Haywood, R. Gupta and M. Missous, Observation of Intersubband Absorption in the Forbidden Polarisation for a Stepped Double Barrier Quantum Well, IEE Proceedings - Optoelectronics 150, 377 (2003)

K. T. Lai, S. K. Haywood, R. Gupta and M. Missous, Enhanced Intersubband Absorption in Stepped Double Barrier Quantum Wells, Electronics Letters 38, 529 (2002)