Dr. Khue Tian Lai DipEng (Elec), MEng (Hons), PhD (Elec), MIET

Postdoctoral Research Assistant

Office : Lab next door to Room 287, 2nd Floor, Fenner Building

Phone : +44 1482 465534                    Fax    : +44 1482 466664

Email  : K.T.Lai@hull.ac.uk

 

EDUCATIONS

  • Jun 1989 - Jun 1992 Diploma in Electrical Engineering, Ngee Ann Polytechnic, Singapore.

    "Microprocessor Control Lighting System"

  • Sep 1997 - Jun 1999 MEng (Hons) in Electronics Communications Engineering, Hull University, Hull, UK.

    "The Evaluation of a p-GaSb/n-GaAs Heterojunction Solar Cells"

  • Dec 2000 - Jan 2005 PhD in Electronic Engineering in Hull University, Hull, UK.

    "Optical Characterisation of Quantum Well Infrared Photodetector (QWIP) for Gas Sensing Applications"

 

RESEARCH INTERESTS

  • Infrared photodetectors for gas sensing applications

  • Design of photodetectors based on intersubband transitions in quantum wells

  • Evaluation of the optical and electrical properties of these devices

 

PUBLICATIONS

 

A. Krier, V. M. Smirnov, P. J. Batty, M. Yin, K. T. Lai, S. I. Rybchenko, S. K. Haywood, V. I. Vasil`ev, G. S. Gagis, and V. I. Kuchinskii, Midinfrared Photoluminescence and Phase Separation in Pentenary GaInAsPSb Alloys Grown by Liquid Phase Epitaxy, Applied Physics Letters, 91, 082102 (2007)

 

A. H. Mohamed, M. Missous, K. T. Lai and S. K. Haywood, Near Room Temperature Operation of a Highly Strained Short Wavelength (2.1mm) AlAs/In0.84Ga0.16As/AlAs/InAlAs QWIPs,  Semiconductor Science Technology, 21, 813 (2006)

 

K. T. Lai, A. H. Mohamed, M. Missous, R. Gupta and S. K. Haywood, Photovoltaic Operation up to 270K of a Strain-compesated AlAs/In0.84Ga0.16As/AlAs/InAlAs Quantum Well Infrared Photodetector, Applied Physics Letters, 87, 192113  (2005)

 

K. T. Lai, R. Gupta, M. Missous, and S. K. Haywood, Intersubband Absorption from 2-7mm using Strain-compensated Double-barrier InGaAs Multiquantum Wells, Proceedings of the 27th International Conference on the Physics of Semiconductors Part B, Flagstaff, Arizona, 2005, Vol. 772, p.1135, edited by José Menéndez and Chris G. Van de Walle.

 

K. T. Lai, R. Gupta, M. Missous and S. K. Haywood, Intersubband Absorption from 2-7mm in Strain-compensated Double-barrier In(x)Ga(1-x)As Multiquantum Wells, Semiconductor Science Technology, 19, 1263 (2004)

 

M. Missous, C. J. Mitchell, S. L. Sly, K. T. Lai, R. Gupta and S. K. Haywood, Highly Strain In(x)Ga(1-x)As-In(y)Al(1-y)As (x>0.8, y<0.3) Layers for Short Wavelength QWIP and QCL Structures Grown by MBE, Physica E, 20, 496 (2004)

 

R. Gupta, K. T. Lai, M. Missous and S. K. Haywood, Subband Non-parabolicity Estimated from Multiple Intersubband Absorption in Highly Doped Multiquantum Wells, Physical Review B, 69, 033303 (2004)

 

K. T. Lai, M. Missous, R. Gupta and S. K. Haywood, Intersubband Absorption in Strain-compensated InAlAs/AlAs/InxGa1-xAs (x~0.8) Quantum Wells Grown on InP, Journal of Applied Physics, 93, 6065 (2003)

 

K. T. Lai, S. K. Haywood, R. Gupta and M. Missous, Observation of Intersubband Absorption in the Forbidden Polarisation for a Stepped Double Barrier Quantum Wells, IEE Proceedings - Optoelectronics, 150, 377 (2003)

 

K. T. Lai, S. K. Haywood, R. Gupta and M. Missous, Enhanced Intersubband Absorption in Stepped Double Barrier Quantum Wells, Electronics Letters, 38, 529 (2002)

 

 

CONFERENCE AND MEETING PRESENTATIONS

 

S. K. Haywood, R. Gupta, K. T. Lai, W. K. Chee, A. H. Mohamed, and M. Missous, A Strain-compensated Mid-infrared Quantum Well Photodetector Operating at Zero Bias up to 250 K and in Photoconductive Mode up to 300K, 9th International Conference on Intersubband Transitions in Quantum Wells, Ambleside, Cumbria, UK, 09-14th September 2007.

 

P. Carrington, V. A. Solov'ev, Q. Zhuang, K. T. Lai, S. K. Haywood, S. V. Ivanov and A. Krier, Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes, International Workshop on Long Wavelength Quantum Dots : Growth and Applications, INSA, Rennes, France, 05-06th July 2007.

 

A. Krier, V. M. Smirnov, P. J. Batty, R. Jones, V. I. Vasil`ev, G. S. Gagis, V. I. Kuchinskii, K. T. Lai, and S. K. Haywood, Mid-infrared Light Emitting Diodes Based on Pentenary GaInAsPSb Alloys Grown by Liquid Phase Epitaxy, 8th International Conference on Mid-Infrared Optoelectronic Materials & Devices, Bad Ischl, Austria, 14-16th May 2007.

 

K. T. Lai, R. Gupta, A. H. Mohamed, M. Missous, and S. K. Haywood, InGaAs-AlAs-InAlAs 2-3µm QWIPs operating at zero bias up to 270 K and in photoconductive mode up to 300K, 15th European Workshop on Heterostructure Technology, Manchester University, UK, 01-04th October 2006.

 

S. K. Haywood, K. T. Lai, A. H. Mohamed, and M. Missous, InGaAs-AlAs-InAlAs QWIPs operating at zero bias up to 270K, 8th International Conference on Intersubband Transitions in Quantum Wells, Cape Cod, Massachusetts, USA, 11-16th September 2005.

 

A. M. Mohamed, M. Missous, K. T. Lai, and S. K. Haywood, Highly-strained and Strain-compensated InGaAs-AlAs-InAlAs QWIPs, 7th International Conference on Mid-Infrared Optoelectronic Materials & Devices, Lancaster University, UK, 12-14th September 2005.

 

K. T. Lai, R. Gupta, M. Missous, and S. K. Haywood, Intersubband Absorption from 2-7 mm using Strain-compensated Double-barrier InGaAs Multiquantum Wells, 27th International Conference on the Physics of Semiconductors, Flagstaff, Arizona USA, 26-30th July 2004.

 

R. Gupta, K. T. Lai, M. Missous, and S. K. Haywood, A Study of Intersubband Absorption for l£ 6mm in Strain-compensated AlInAs/AlAs/InGaAs Multiple-quantum Wells, 6th International Conference on Mid-Infrared Optoelectronic Materials & Devices, St. Petersburg, Russia, 28th June-01st July 2004.

 

R. Gupta, K. T. Lai, M. Missous, and S. K. Haywood, Subband Non-parabolicity Determined from Intersubband Absorption in Strain-Compensated InGaAs MQWs, 7th International Conference on Intersubband Transitions in Quantum Wells, Evolene, Switzerland, 01-05th September 2003.

 

K. T. Lai, M. Missous, R. Gupta, and S. K. Haywood, Intersubband Absorption in Strain-compensated InAlAs/AlAs/InxGa(1-x)As (x~0.8) Quantum Wells Grown on InP, The Seventh Mid-infrared Network Meeting, Hull University, UK, 19th March 2003.

 

K. T. Lai, S. K. Haywood, R. Gupta, and M. Missous, Enhanced Intersubband Absorption in a Stepped Double Barrier Quantum Well Waveguide Structures, 5th international Conference on Mid-Infrared Optoelectronic Materials and Devices, Annapolis, Maryland USA, 8-11th September 2002.

 

K. T. Lai, S. K. Haywood, R. Gupta, and M. Missous, Enhanced Intersubband Absorption in a Stepped Double Barrier Quantum Well Waveguide Structures, The Sixth Mid-infrared Network Meeting, Imperial College, London, 9th July 2002.

 

K. T. Lai, S. K. Haywood, R. Gupta, and M. Missous, Enhanced n=1 to n=2 Intersubband Absorption in a Stepped Double Barrier Quantum Well, The Fifth Mid-infrared Network Meeting, Heriot Watt University, UK, 7th December 2001.

 

K. T. Lai, S. K. Haywood, R. Gupta, K. Gooljar, M. Missous, and A. J. Stead, Quantum Well Intersubband Photodetectors for Gas Sensing Applications, The Fourth Mid-infrared Network Meeting, University of Surrey, UK, 5th July 2001.

 

 

 

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